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A new CMOS structure with vertical p-channel transistorsYEH, W. C; JAEGER, R. C; COOK, K. B et al.IEEE electron device letters. 1983, Vol 4, Num 6, pp 196-198, issn 0741-3106Article

Generalized gradual channel modeling of field-effect transistorsDARLING, R. B.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2302-2314, issn 0018-9383Article

An analytical model of punchthrough voltage of short-channel MOSFETs with nonuniformly doped channelsDAS GUPTA, A; LAHIRI, S. K.Solid-state electronics. 1990, Vol 33, Num 4, pp 395-400, issn 0038-1101, 6 p.Article

COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELSUMESH KUMAR.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 37-46; BIBL. 85 REF.Article

Emission des porteurs de charge dans un diélectrique lors de leur réchauffement dans un transistor par une polarisation canal-substratKOLOSANOV, V. A; SINITSA, S. P.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 152-156, issn 0544-1269Article

Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings

Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFET'sKAGA, T; SAKAI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2384-2390, issn 0018-9383Article

Accuracy of effective channel-length extraction using the capacitance methodYAO, C. T; MACK, I. A; LIN, H. C et al.IEEE electron device letters. 1986, Vol 7, Num 4, pp 268-270, issn 0741-3106Article

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on si(100)SHIBAHARA, K; SAITO, T; NISHINO, S et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 692-693, issn 0741-3106Article

Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiationSAITOH, M; SHIBATA, H; MOMOSE, H et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 10, pp 2463-2466, issn 0013-4651Article

Influence of ionising irradiation on the channel mobility of MOS transistorsBELLAOUAR, A; SARRABAYROUSE, G; ROSSEL, P et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 4, pp 184-186, issn 0143-7100Article

Study of 1/f noise in M-MOSFET's: linear regionCELIK, Z; HSIANG, T. Y.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2797-2802, issn 0018-9383Article

A parametric short-channel MOS transistor model for subthreshold and strong inversion currentGROTJOHN, T; HOEFFLINGER, B.IEEE journal of solid-state circuits. 1984, Vol 19, Num 1, pp 100-112, issn 0018-9200Article

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The effect of channel implants on MOS transistor characterizationBOOTH, R. V; WHITE, M. H; HIN-SUM WONG et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2501-2509, issn 0018-9383Article

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctionsMORAVVEJ-FARSHI, M. K; GREEN, M. A.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 474-476, issn 0741-3106Article

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A SIMPLIFIED MODEL OF SHORT-CHANNEL MOSFET: CARACTERISTICS IN THE BREAKDOWN MODEFU CHIEH HSU; MULLER RS; CHENMING HU et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 571-576; BIBL. 9 REF.Article

THREE-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECTSHIGYO N; KONAKA M; DANG RLM et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 274-275; BIBL. 3 REF.Article

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